The Impact of Forming Temperature on Material and Electrical Characteristics of Nickel Silicide Gate Electrode
Electron Velocity Saturation and Probable Cross-Section Area of Leakage Current Path Post Soft Breakdown (SBD) in Ultrathin Gate Oxides
Electrical Properties and Carrier Transport Mechanisms of Nanometer-Scale Ultra-Thin Channel Poly-Si Transistors
Efficient Parameter Extraction Scheme in Ultra-Thin Gate Dielectric MOS Capacitor with Considerable Gate Leakage