Flash Lamp Annealing in Diluted Ozygen for Low Sheet Resistance and Ultra-Shallow Junctions: Suppression of wet-cleaning-induced sheet-resistance degradation

摘要：

We have investigated the process of flash lamp annealing (FLA) in a dilute oxygen ambient. The oxide grown during this process protects against wet chemicals and maintains the low sheet resistance (Rs). The influence of several wet chemical cleans after FLA on ultra-shallow junction (USJ) characteristics were evaluated, and it was found that wet chemical cleaning increased the Rs of the doped layer. In the worst case, the advantage (high activation) of FLA was substantially lost. We therefore proposed the formation of a capping oxide by adding oxygen to the ambient during the FLA process to prevent the increase of Rs, and to demonstrate its function in providing a highly-effective protective barrier.

作者: Shinichi Kato Takayuki Aoyama Takashi Onizawa Yasuo Nara Yuzuru Ohji

作者单位: Semiconductor Leading Edge Technologies, Inc.16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 131-134

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）