Optimization of Heat Dissipation Design for High-power SiC SSPC Based on Icepak Thermal Simulation
With the increase of power level, the research of high-power and high-reliability SiC SSPC has become a hot spot in the industry.The heat generated by SSPC work will also increase greatly due to the increase of current level.As the power core device of SiC SSPC, overheating damage of SiC MOSFET is one of the main causes of its failure.The SiC MOSFET in the die package mode can effectively improve the heat dissipation performance of the SSPC under high current operation and can significantly reduce the size of the SSPC.However, there are few studies on the actual heat dissipation and heat dissipation performance optimization of die-packaged SSPC.This paper takes 20A DC high-power SiC SSPC working in high temperature environment as the research object.Firstly, temperature field simulation analysis of die-packaged SiC SSPC is carried out based on the actual working conditions.Then, the electrical characteristics of the SiC MOSFET power part of SSPC operating under different ambient temperature and load conditions are analyzed.Finally, using the DOE experimental design algorithm, and considering the junction temperature and switching characteristics of the SiC MOSFET and the process level of the heat sink, the structure of the SiC MOSFETs heat sink is parametrically analyzed and getting the heat sink optimized design scheme, and verify the correctness of the optimization scheme through temperature field simulation analysis.
high-power SiC SSPC Die-packaged SiC MOSFET thermal simulation optimized design
Hongyu Zhang Kangyao Lai Shuang Si Yan Zhu Kaixin Zhang Shujuan Wang
Harbin Institute of Technology, Harbin, 150001 Beijing Keytone Electronic Relay General Factory Co., Ltd., 100054
国际会议
江苏苏州
英文
193-198
2019-11-04（万方平台首次上网日期，不代表论文的发表时间）