Effect of Mo,C Co-doping on the Electrical Properties of AgSnO2 Contact
In order to study the electrical properties of Mo C co-doped SnO2 contact materials, We calculate the band structure, density of states and number of charge distribution based on density functional theory using the CASTEP module in the Materials Studio software.The results show that the structure of the co-doped SnO2 still belongs to a direct bandgap semiconductor.The 2s state of C and 4d state of Moinserts into the valence band, which moves in the direction of the high-energy level and passes through the Fermi energy level.The 4d state of Mo atom insertsintothe conduction band, which moves to the lower energy level, making the forbidden band width decrease.The layout analysis shows that, when co-doping occurs, the layout value of charge overlap between atoms increases, the carrier concentration increases, and the degree of charge transfer between atoms increases.In conclusion, compared with single doping, co-doping can improve the conductivity of AgSnO2, providing a theoretical basis for the development of contact materials.
Contact materials AgSnO2 The first principle Co-doped Electrical properties
Zhe Zhang Jingqin Wang
Hebei University of Technology, Tianjin, 300130 Hebei University of Technology, Tianjin, 300130;Electrical Apparatus Institute of Hebei Province, Ti
国际会议
江苏苏州
英文
300-305
2019-11-04（万方平台首次上网日期，不代表论文的发表时间）