PIEZOPOTENTIAL IN A COMPOSITE PIEZOELECTRIC SEMICONDUCTOR CANTILEVER PRODUCED BY SHEAR FORCE
We propose a specific composition of a beam of a piezoelectric dielectric layer sandwiched between two nonpiezoelectric semiconductor layers.A one-dimensional theoretical model is established for the bending of the beam with shear deformation.A theoretical analysis of a cantilever of such a beam under an end shear force is performed.Results show that an axial electric field develops in the beam because of the shear deformation accompanying bending via the piezoelectric constant e15.The axial electric field drives the charge carriers to the two ends of the beam.Thus the proposed composite beam can be used as a new and basic structure with potential applications in piezotronics when the shear force is present or dominant.
Piezoelectric Semiconductor Composite Beam Piezotronic
Kai FANG Bin WANG Zheng-hua QIAN Jia-shi Yang
State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Aerospace Enginee Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 6858
国际会议
石家庄
英文
92-96
2019-11-01（万方平台首次上网日期，不代表论文的发表时间）