W-band Broadband Low Noise Amplifier Using 0.1-μm GaAs pHEMT Process

摘要：

　　This paper presents the design and realization of a W-band(75~110 GHz)broadband low noise amplifier(LNA)using 0.1-μm GaAs power pseudomorphic high electron mobility transistor(pHEMT)process.The proposed LNA features 20 dB of small signal gain,5.5 dB of noise figure(NF)at the entire Wband.A combination of series C and L and shunt C matching configuration is adopted to optimize the input return loss,which can achieve-13.73 dB at 84.0 GHz.The whole LNA is 1.2x1.0 mm2 and the current consumption is 92 mA at a 1.5 V supply voltage.

关键词： W-band pHEMT LNA broadband

作者: Jian Zhang Yawen Lu Pengfei Sun Qian Wu

作者单位: Hangzhou Dianzi University,Hangzhou,China

会议类型: 国际会议

会议名称: The 12th International Symposium Antennas, Propagation, and EM Theory(ISAPE 2018)?(第十二届天线、传播与电磁理论国际学术会议)

会议地点: 杭州

会议语种:英文

页码: 1-3

在线出版日期: 2018-12-03（万方平台首次上网日期，不代表论文的发表时间）