A D-band Monolithic Low Noise Amplifier on InP HEMT Technology
In this paper,a D-band monolithic microwave integrated circuit low noise amplifier(LNA)is designed by using 0.5μm InP high electron mobility transistor(HEMT)technology.The circuit is mainly composed of five-stage of common-source amplification structure,and resistance and capacitance are connected in series to form a feedback network,which can improve the stability of the circuit.The series resistance and parallel grounding capacitance on the DC bias circuit constitute a low-pass structure,which is to absorb the gain of the circuit at low frequency,prevent the circuit from self-oscillation.In the 120-150GHz frequency range,the simulated gain is above 18.5 dB,and the noise figure is lower than 4.5dB.The area of this chip is 1.12×0.62mm2,and the power consumption of the whole circuit is 47mW.
Low noise amplifier D-band InP HEMT common-source structure
Dandan Yang Jincai Wen Meilin He Ruicong He
Key Lab.of Radio Frequency Circuits and Systems,Ministry of Education Hangzhou Dianzi University Han The 13th Research Institute of CETC Shijiazhuang,China
国际会议
杭州
英文
1-4
2018-12-03（万方平台首次上网日期，不代表论文的发表时间）