Novel 3.3kV Si-SiC Hybrid Power Module
In this paper,one type of novel standardized 140mm×100mm footprint 3.3 kV Si-SiC hybrid power module has been designed and investigated.The power module is characterized by packaging of silicon based insulated-gate bipolar transistors(IGBTs)and silicon carbide(SiC)based Schottky barrier diodes(SBDs).To reduce the thermal coupling and enhance the reliability,each IGBT chip is anti-paralleled with two SBDs.Due to the adoption of new packaging structure,the multi-physics study is conducted for reliability-related analysis and optimization.We present the details about electromagnetic(EM)simulation and thermal network extraction at the design stage together with power module characteristics.
IGBT thermal network electro-thermal
Daohui Li Fang Qi Xiang Li Matthew Packwood Haihui Luo Guoyou Liu Yangang Wang Xiaoping Dai
Power Semiconductor R&D Center,Dynex Semiconductor Ltd,Lincoln,LN6 3LF,United Kingdom State Key Laboratory of Advanced Power Semiconductor Devices,CRRC Time Electric Co.Ltd,Zhuzhou,41200 Power Semiconductor R&D Center,Dynex Semiconductor Ltd,Lincoln,LN6 3LF,United Kingdom;State Key Labo
国际会议
上海
英文
27-30
2018-08-08（万方平台首次上网日期，不代表论文的发表时间）