Through glass via technology for ultra-high Q factor inductors
Increasing demand for more advanced electronic products has driven semiconductor industry to develop more innovative and emerging advanced packaging technologies.Integrated Passive Devices have been proved to be an effecitve solution in fabricating products with better performance.In order to form higher Q factor inductors,the 3D integration inductors are designed and fabricated based on through glass via(TGV)method.Effect of substrate material and structure of 3D integration inductors was investigated by the simulation of HFSS and the test result.The results show that the ultra-high Q factor 3D integration inductors can be achieved by choosing glass substrate as long as selecting through glass via method.3D integration inductors were achieved by reducing losses caused by MOS parasitic capacitor in the 3D integration inductors.
TGV inductors IPD 3D integration Q factor
Xiufeng Zhou Yuyuan Cao Jianfeng Wang Yong Ji Nayan Gao Xuefei Ming
Center of Microsystems CETC 58 WuXi,China Dept.Packaging CETC 58 WuXi,China
国际会议
上海
英文
215-218
2018-08-08（万方平台首次上网日期，不代表论文的发表时间）