SiC MOSFET Threshold-Voltage Instability Under High Temperature Aging

摘要：

　　A systematic study of discrete SiC MOSFETs reliability under High Temperature stress has been carried out.High Temperature stress is performed in this work to characterize the threshold voltage instability.To investigate the degradation mechanism of devices,simulation according to the structure of MOSFET cell has been performed.The result shows that the threshold voltages change trends of both MOSFETs are the same,including drop-down period at very early time due to a decrease of doping concentration at channel region and gradual raise-up period at in the rest of time resulting from decline of interface charge.

关键词： SiC MOSFET High Temperature threshold voltage instability simulation doping concentration interface charge

作者: Yang Liu Xianping Chen ZhaoHui Zhao ZhiGang Li CaiTao Lu JingGuo Zhang Huaiyu Ye SAU WEE KOH LiGen Wang Guoqi Zhang

作者单位: College of Optoelectronic Engineering,Chongqing University,Chongqing,400044,China College of Optoelectronic Engineering,Chongqing University,Chongqing,400044,China;School of Mechanic Beijing COMPO Advanced Technology Co.,Ltd.GRINM Group Co,Beijing 101407,China GRIPM Advanced Materials Co.Ltd GRINM Group Co,Beijing 101407,China College of Optoelectronic Engineering,Chongqing University,Chongqing,101407,China Shenzhen Longgang District Bantian Huawei Headquarter HuaWei Technology,Shenzhen 400044,China GRIPM Advanced Materials Co.Ltd,GRINM Group Co,Beijing 518129,China Delft Institute of Microsystems and Nanoelectronics Delft University of Technology,The Netherlands D

会议类型: 国际会议

会议名称: 第十九届国际电子封装技术会议(ICEPT 2018)

会议地点: 上海

会议语种:英文

页码: 347-350

在线出版日期: 2018-08-08（万方平台首次上网日期，不代表论文的发表时间）