FE Modeling and Analysis on Thermosonic Flip Chip Bonding Process for Cu/low-k Wafer
Thermosonic flip-chip bonding(TFCB)is an advanced integrated circuit package technology for area-array connections.The dynamic finite element(FE)analysis model was established for the TFCB process to explore dynamic stress and strain for the microstructure of the Cu/low-K wafer.Based on this model,the stress and strain evolution process was obtained for the wafer microstructure.From the analysis result,we found that the maximum von Mises stress distributions are mostly concentrated on the copper via areas,and the von Mises stress of the metal layer is always greater than that of the low-k layer.Based on the FE model analysis,the effect study of the process parameters were thus carried out,which included the effects by the ultrasonic vibration amplitude and the number of copper via.According to the results of modeling simulation,the parameter effects on stress and strain distribution were achieved.This study was useful for the parameter setting of the TFCB process and for optimizing the microstructure design of Cu/low-k Wafer.
thermosonic flip chip bonding cu/low-k wafer copper via low-k layer amplitude of ultrasonic vibration
Xuezhi Zhang Jian Gao Yun Chen Yunbo He Xin Chen
Key Laboratory of Precision Microelectronic Manufacturing Technology & Equipment of Ministry of Education,Guangdong University of Technology,Guangzhou,510006,P.R.China
国际会议
上海
英文
404-408
2018-08-08（万方平台首次上网日期，不代表论文的发表时间）