The impact of bumping stress on Cu RDL structure

摘要：

　　Wafer-level-packaging(WLP)is widely used in consumer products and is directly packaged on wafers.Wafer warpage and internal stress is a big challenge.RDL direct on passivation structure is mainly used for power management device because they have better electrical carrying capability and performance.However,a thick Cu RDL is located in the structure of the passivation layer,which leads to the bumping stress direct to the passivation layer.Bumping stress comes from Cu plating(plating stress),PI curing and solder ball reflow process because of Coefficient of Thermal Expansion mismatch of different material(Silicon,Cu,PI material,Solder ball).The method to reduce the wafer warpage and internal stress and reduce the impact on the reliability of the device during the collision are investigated in the present study.

关键词： Stress Polyimide curing profile RDL annealing

作者: Yulong Xie Liming Gao

作者单位: Product Engineering Department of Jiangyin ChangDian Advanced Packaging CO.,LTD Jiangyin,China;Schoo School of Material Science and Engineering,Shanghai Jiao Tong University,Shanghai,200240,China Shang

会议类型: 国际会议

会议名称: 第十九届国际电子封装技术会议(ICEPT 2018)

会议地点: 上海

会议语种:英文

页码: 513-516

在线出版日期: 2018-08-08（万方平台首次上网日期，不代表论文的发表时间）