Room temperature GaN bonding by surface activated bonding methods
In this work,both GaN-Si and GaN-diamond bonding at room temperature were achieved by surface activated bonding(SAB)methods.In the GaN-Si bonding by standard SAB,the results of Ga-face to Si bonding are better than that of N-face to Si bonding such as higher bonding energy.Both of the structure and composition of the two kinds of GaN-Si interfaces were investigated to understand the bonding mechanisms.In the GaN-diamond bonding by modified SAB using an intermediate Si nano-layer,a uniformly seamless bonding interface was achieved.The GaN-diamond bonded structure is expected to be helpful for the applications of high-power GaN devices.
GaN bonding room temperature SAB interface
Fengwen Mu Tadatomo Suga
Department of Precision Engineering The University of Tokyo Tokyo,Japan
国际会议
上海
英文
521-524
2018-08-08（万方平台首次上网日期，不代表论文的发表时间）