Temperature and stress distribution of IGBT module in DC power cycling test with different switching frequencies
Insulated gate bipolar transistor has high on-state current and power loss when it operates.The temperature produced by Joule heating causes a great influence on IGBTs reliability,and it even leads the IGBT module to failure.In this article,a DC power-cycle experimental platform is built up,and a infrared thermal imager is used for measuring the temperature distribution of the IGBT module at different switching frequencies.The external trigger shooting function can make the infrared detecting camera photographed simultaneously at the moment of the heating current turned off,so that the highest temperature of the chip can be exact measured.The electrothermal-mechanical coupling finite element analysis at different switching frequencies was performed by using ABAQUS software.The results of electro-thermal analysis are in accordance with the measure data,and thermal-mechanical analysis gives the stress spread of the whole module at different switching frequencies.The results of experimental and simulation show that with the increase of switching frequency,the junction temperature difference of the IGBT chip decreases and the maximum stress diminishes.
IGBT module DC power cycling experiment temperature stress switching frequency
FANG Chao AN Tong QIN Fei ZHAO Jingyi YUAN Xuequan
Institute of Electronics Packaging Technology and Reliability,College of Mechanical Engineering and Applied Electronics Technology,Beijing University of Technology,Beijing 100124,China
国际会议
上海
英文
785-790
2018-08-08（万方平台首次上网日期，不代表论文的发表时间）