Method to Prevent Thin Film Cracking of Thin Film Encapsulation in Flexible AMOLED

摘要：

　　PECVD hydrogenated silicon oxynitride(SiON)thin film,due to its excellent chemical and physical properties,is widely used in flexible encapsulation as an protective layer.However,SiON thin film cracking severely restricted the performance of the thin film encapsulation,and cannot be effectively tackled by flexible electronics industry.So improving the quality of the SiON thin film and preventing thin film cracking is crucial to flexible electronics industry.In this paper,effects of RF power,pressure,process gas on stress property in SiON thin film were studied in detail by stress meter.Therefore,increasing RF power,pressure and decreasing H2 flow can prevent SiON thin film cracking.

关键词： PECVD SiON Thin Film Stress

作者: Wei Ao Yinghui Zhu Jianhua Zhang Xiaogang Xin Feng Gao Chaochi Peng Xiangchao Liu Chunhong Li Yan Wang

作者单位: Kunshan Govisionox Optoelectronics Co.,LTD Kunshan,China Key Laboratory of Advanced Display and System Application Shanghai University Shanghai,China

会议类型: 国际会议

会议名称: 第十九届国际电子封装技术会议(ICEPT 2018)

会议地点: 上海

会议语种:英文

页码: 812-814

在线出版日期: 2018-08-08（万方平台首次上网日期，不代表论文的发表时间）