Reliability Investigation of 4H-SiC MOSFET Based on TCAD Simulation

摘要：

　　The reliability of 4H-SiC MOSFET was investigated based on TCAD simulation.The results shown that the leakage current was increased with the increment of ambient temperature while the breakdown voltage almost kept constant.Localized electric field focalizing indicated that a local breakdown region was located between P-base and JFET region.Significantly,the SiC MOSFET would be damaged from metal electrodes melting and gate oxide breaking down under short-circuit condition owing to localized hotspot.

关键词： reliability 4H-SiC MOSFET TCAD hotspot

作者: Houcai Luo Yiping Huang Kai Zheng Chunjian Tan Liming Wang Shaogang Wang Huaiyu Ye Xianping Chen

作者单位: School of Mechanical and Electrical Engineering,Guilin University of Electronic Technology,Guilin,54 School of Mechanical and Electrical Engineering,Guilin University of Electronic Technology,Guilin,54 College of Optoelectronic Engineering,Chongqing University,Chongqing,400044,China

会议类型: 国际会议

会议名称: 第十九届国际电子封装技术会议(ICEPT 2018)

会议地点: 上海

会议语种:英文

页码: 956-960

在线出版日期: 2018-08-08（万方平台首次上网日期，不代表论文的发表时间）