A novel organic coating assisted laser drilling method for TSV fabrication
Through-silicon vias(TSVs)is a promising three-dimensional packaging solution in post-Moores law era in the semiconductor industry.The fabrication of through silicon via plays an important role in three-dimensional packaging.Laser drilling is widely used in TSVs fabrication.However,the geometry quality of laser drilling is unsatisfied and heat affected zone(HAZ)is intrinsic.In this work,a novel organic coating assisted picosecond UV laser drilling method is proposed to obtain highquality TSVs,the HAZ was noticeably eliminated and the TSVs quality was significantly improved.The effects of the organic thickness and laser power on the TSVs quality were also studied in detail.It is found that the diameter of vias decreases with the increase of the organic thickness and decrease of the laser power.The minimum diameter of TSV obtained by this method is about 15 μm while the aspect ratio is beyond 30.Most importantly,by coating with the organic layer,the minimized via diameter can be decreased to about only 70%of the laser spot size which breaks the limit that the minimized via should be larger than or at least equal to the laser spot size.These findings will be helpful for TSV technology development in modern three-dimensional packaging.
through silicon via ultraviolet picosecond laser drilling organics coating method heat affected zone elimination
Xiquan Mai Yun Chen Dachuang Shi Chen Xun Chen Xin Jian Gao Chengqiang Cui Yunbo He Ching-Ping Wong
Key Laboratory of Precision Microelectronic Manufacturing Technology & Equipment of Ministry of Educ Key Laboratory of Precision Microelectronic Manufacturing Technology & Equipment of Ministry of Educ Department of Engineering,The Chinese University of Hong Kong,Hong Kong,China;School of Materials Sc
国际会议
上海
英文
999-1002
2018-08-08（万方平台首次上网日期，不代表论文的发表时间）