3ω method based experimental measurements on Kapitza resistance of Si/SiO2 interfaces
SiO2 thin films are applied as dielectric layer in semiconductor devices for its excellent physical and electronic properties.The thermal boundary resistance plays a significant role in heat conduction process in nanostructures,which subsequently tightly correlates with the performance of micro/nano devices.In this paper,the heat conductance across Si/SiO2 interface with different thickness of SiO2 thin film has been investigated by using the slope 3ω method based on the steady-state conduction technique.The apparent thermal conductivity and the intrinsic thermal conductivity of SiO2 thin films as well as the interfacial thermal resistance were evaluated.It was found that the apparent thermal conductivity monotonically reduced with respect to the decreasing of the film thickness.The estimated intrinsic thermal conductivity of SiO2 thin films is about 1.301W/mK and the estimated interface thermal resistance between the film and the substrate is approximate 2.237×10-8m2KW-1,which has agreement with the reported results in the literature.
Kapitza resistance Si/SiO2 interface 3ω method
Guang Zheng Wenhui Zhu Hu He
School of Mechanical and Electrical Engineering,Central South University,Changsha 410083,China State Key Laboratory of High Performance Complex Manufacturing,Central South University,Changsha 410
国际会议
上海
英文
1009-1012
2018-08-08（万方平台首次上网日期，不代表论文的发表时间）