Mathematical simulation and experimental verification for through silicon via with additives
Through silicon via(TSV)is an important technology to realize three-dimensional(3D)packaging with lower energy consumption,faster signal transmission rate and smaller packaging size.Voids and seams are usually formed in the TSV filling process and an appropriate numerical model is needed to predict the filling process.A mathematical model is presented and verified by experiments.In the simulation,we found that as the suppressor concentration increases,the cupric ion in the microvias decreases more slowly with increasing microvias depth; the location of the peak of the accelerator surface coverage is further away from the orifice and the microvias can maintain a larger range of high suppressor surface coverage,resulting in a higher filling ratio.In addition,the presence of accelerators cannot change the distribution of cupric ions in the microvias and the suppressor surface coverage.Therefore,the filling ratio is not affected.But the presence of accelerators can greatly accelerate the cupric deposition rate.
three-dimensional packaging TSV mathematical model
Wei Liu Fuliang Wang Yan Wang Wenhui Zhu
State Key Laboratory of High Performance Complex Manufacturing and School of Mechanical and Electronical Engineeingr Central South University Changsha,China
国际会议
上海
英文
1036-1041
2018-08-08（万方平台首次上网日期，不代表论文的发表时间）