Study on Interfacial Diffusion Mechanism of The Nonstoichiometric ratio TiN0.3 and AlN composite in the process of sintering
Covalent compounds have strong covalent bond,thus showing high melting point,high hardness,high temperature resistance,corrosion resistance,wear resistance and other excellent performance,is widely applied to the field of refractory materials and wear-resistant materials.But at the same time this kind of material also has the problem of poor toughness and difficulty in sintering.In this article,by adding the nonstoichiometric ratio to the AlN titanium nitride,a new method were studied to improve the sintering property and reduce the sintering temperature through vacancy diffusion and to study the sintering of micro forming mechanism.The experimental results show that after sintering at the interface between TiN0.3 and AlN two-phase,the TiN0.3/AlN layer have apparent diffusion zone,AlN in N,Al atom diffusion in TiN0.3 via the vacancy diffusion mechanism.As a result of the existence of a large amount of N of TiN0.3 space,when the diffusion of N atomic migration in TiN0.3 is absorbed by vacancy,and approaches stoichiometric ratio TiN layer AlN substrate;Al atoms crystallized out of the TiN layer in the hexagonal AlN structure in TiN0.3 matrix.
non-stoichiometric TiNx Interface densification AlN Covalent compounds
ZhanWen He M Z Wang
School of Mechanical Engineering,Wuhan Polytechnic Wuhan Polytechnic University Wuhan,China Key Laboratory of Metastable Materials Science and Technology Yanshan University Qinhuangdao,China
国际会议
上海
英文
1198-1201
2018-08-08（万方平台首次上网日期，不代表论文的发表时间）