Design and development of power module copackaged with SiC GTO and SiC PiN
We report on the packaging design and development of SiC GTO and SiC PiN in one module for pulse power application.The module is designed to withstand voltage up to 4KV.SiC GTO is a solid state switch with high forward blocking voltage and wide range of working temperature.And SiC PiN has high reverse blocking voltage.Several modules in different arrangement of GTOs and PiNs are studied.The GTOs are with size from 2.5mm to 7mm,and PiNs are with size from 1.64mm to 4.44mm.Four types of modules were successfully developed,through the DBC substrate designing and the production processes research.The DBC layout we designed is suitable for different types of modules co-packaging SiC GTO and SiC PiN devices,and also suitable for their derivation terminals setting requirements.Q3D was used to extract parasitic parameters.The interconnection between the chips and DBC substrate was realized by a kind of new interconnection material,nano-silver paste,which has low sintering temperature but high temperature application characteristics.
SiC GTO SiC PiN power module nano-silver sintering
Yingkun Yang Lei Gao Zhiqiang Li Kun Zhou Lin Zhang Long Zhang Juntao Li Yunhui Mei
Microsystem and Terahertz Research Center,Institute of Electronic Engineering,China Academy of Engin School of Material Science and Engineering Tianjin University Tianjin,P.R.China
国际会议
上海
英文
1219-1222
2018-08-08（万方平台首次上网日期，不代表论文的发表时间）