A Novel Hole-Path and Carrier-Stored IGBT with Low Switching Loss and On State Voltage

摘要：

　　A novel hole path and carrier stored insulated gate bipolar transistor(HP-CS-IGBT)is proposed and investigated.In our work,the hole path structure helps to reduce the turn off time in switch-state and the carrier stored structure helps to reduce the on-state voltage(VCE(sat)),respectively.When the turn-off loss(Eoff)is equal to 5 mJ/cm2,the on-state voltage of the 1200V/40A rated HP-CS-IGBT is as low as 1.46V,which has been reduced by 30%compared to the conventional IGBT.Moreover,HP-CS-IGB also overcomes the inherited weak relationship between the forward blocking capacity and on state voltage compared to the conventional carrier stored trench-gate bipolar transistor(CSTBT).

关键词： IGBT Hole path Carrier stored Turn-off loss On-state voltage

作者: Shaogang Wang Chunjian Tan TanLiming Wang Houcai Luo Shaolin Li Huaiyu Ye Xianping Chen

作者单位: School of Mechanical and Electrical Engineering,Guilin University of Electronic Technology,Guilin,54 School of Mechanical and Electrical Engineering,Guilin University of Electronic Technology,Guilin,54 Chongqing University and College of Optoelectronic Engineering,Chongqing University,Chongqing,400044

会议类型: 国际会议

会议名称: 第十九届国际电子封装技术会议(ICEPT 2018)

会议地点: 上海

会议语种:英文

页码: 1223-1226

在线出版日期: 2018-08-08（万方平台首次上网日期，不代表论文的发表时间）