Study on Electrostatic Discharge Damage and Defect Damage Failure Analysis Technology for Semiconductor Devices

摘要：

　　With the increase of integration and process complexity on semiconductor device,electrostatic discharge damage and defect damage have become an important cause of semiconductor device failure.However,electrostatic discharge damage and defect damage have some difficult in the failure analysis of semiconductor devices.By introducing the typical defects of semiconductor devices,by comparing the features and failure analysis techniques of electrostatic discharge damage and defect damage of semiconductor devices.Finally,through the specific failure analysis cases in the application process of semiconductor devices,we obtained the method for analysis the electrostatic discharge damage and defect damage of semiconductor device,and the technology method provides guidance for the improvement and control of the reliability of electronic products.

关键词： Semiconductor device Electrostatic discharge damage Defect damage Failure analysis

作者: HU Lin HE Sheng-zong WANG You-liang LiANG Xiao-si JI Qi-zheng

作者单位: CEPREI Guangzhou 510610,China Beijing Orient Institute of Measurement and Test Beijing,10086,China

会议类型: 国际会议

会议名称: 第十九届国际电子封装技术会议(ICEPT 2018)

会议地点: 上海

会议语种:英文

页码: 1246-1249

在线出版日期: 2018-08-08（万方平台首次上网日期，不代表论文的发表时间）