Mechanisms of power module metallization degradation under ageing

摘要：

　　A new IGBT finite element model considering conducting channel is established.The mechanism in the degradation process of metallization is still uncertain.Thermal stress is considered to be an important factor.Temperature and stress field were obtained by the new model.SEM analysis of degradation metallization surface under DC power cycling test are obtained,and compare with the stress distribution of the simulation.

关键词： IGBT module

作者: YUAN Xuequan AN Tong QIN Fei ZHAO Jingyi FANG Chao

作者单位: Institute of Electronics Packaging Technology and Reliability,College of Mechanical Engineering and Applied Electronics Technology,Beijing University of Technology,Beijing 100124,China

会议类型: 国际会议

会议名称: 第十九届国际电子封装技术会议(ICEPT 2018)

会议地点: 上海

会议语种:英文

页码: 1322-1325

在线出版日期: 2018-08-08（万方平台首次上网日期，不代表论文的发表时间）