The performance of sintered nanocopper interconnections for high temperature device

摘要：

　　IGBT device is developed from silicon to wide bandgap semiconductor materials,and its working temperature has reached to 300 ℃,so the encapsulation is particularly important.NanoCu paste is investigated under H2 at 300℃.A chip is linked to DBC substrate by nanoCu paste under air with different temperature.Results shows the increase of sintered time temperature effectively reduce the porosity of sintered layer and enhance the strength.

关键词： Nanocopper die attach Power device paste

作者: Qipeng Liu Xianping Chen Jie Zhu HuanKun Zhang JiangSong Zhang JingGuo Zhang LiGen Wang Huaiyu Ye SAU WEE KOH Guoqi Zhang

作者单位: College of Optoelectronic Engineering,Chongqing University,Chongqing,400044,China Beijing COMPO Advanced Technology Co.,Ltd.GRINM Group Co,Beijing 101407,China GRIPM Advanced Materials Co.Ltd,GRINM Group Co,Beijing 101407,China Shenzhen Longgang District Bantian HuaWei Technology,Shenzhen518129,China Delft Institute of Microsystems and Nanoelectronics Delft University of Technology,The Netherlands D

会议类型: 国际会议

会议名称: 第十九届国际电子封装技术会议(ICEPT 2018)

会议地点: 上海

会议语种:英文

页码: 1476-1478

在线出版日期: 2018-08-08（万方平台首次上网日期，不代表论文的发表时间）