Process Development of Ultra-Fine Pitch High Density Micro Bumps

摘要：

　　Fine pitch bumping is the key enabling technology to achieve vertical interconnect in electronic packaging and integration.Cu pillar bump with Cu/Ni/SnAg structure is the widely accepted bump scheme to achieve ideal bump electrical and mechanical performance.In this paper,we report our latest results on the 30 um pitch Cu pillar bump development.The critical process steps,including bump lithography,electroplating,seed layer etching,reflow,are investigated.Good Cu pillar bump profile in 30 um pitch is successfully achieved through the optimization of the process.A typical application using the developed bumping process has been demonstrated.

关键词： Micro Bumps Fine Pitch Wafer-level Undercut

作者: Dengfeng Yang Fengwei Dai Wenqi Zhang Guojun Wang Liqiang Cao

作者单位: The National Center for Advanced Packaging,Wuxi,China,214135 The National Center for Advanced Packaging,Wuxi,China,214135;Institute of microelectronics of Chines

会议类型: 国际会议

会议名称: 第十九届国际电子封装技术会议(ICEPT 2018)

会议地点: 上海

会议语种:英文

页码: 1500-1503

在线出版日期: 2018-08-08（万方平台首次上网日期，不代表论文的发表时间）