A review on the copper bond pad application in wire bond technique
Aluminum(Al)has been used as an interconnection material for the last 40 years.As the ultra-largescale integrated devices become more and more smaller,low junction capacitance and higher drive current are measures to improve the performance of semiconductor gate.One attempt is to replace the conventional Al interconnection with copper(Cu),as Cu possesses improved electromigration resistance,lower electrical resistivity and higher thermal conductivity.The frontend change,however,brings concerns to back-end process,probe and later wire bond process on a readily oxidized Cu surface.Questions like the Cu pad oxidation during handling,wafer dicing,die attach and thermosonic bonding are concerns.This review summarizes the current literature on Cu pad,including its manufacturing methods,advantages,disadvantages,oxidation prevention measures,wire bond process and wire bond reliability.It will provide guidance for the work relevant to Cu pad.
Copper bond pad Damascene processes oxidation reliability protection layer
Lois Liao Jinzhi Chen Yan Wang Bisheng Li Xiaomin Fu Chao Hua Younan
WinTech Nano-Technology Services Pte.Ltd.,10 Science Park Road,＃03-26,The Alpha,Science Park Ⅱ,Singa Huawei Technologies Co Ltd,Bantian Huawei Base.Longgang District.Shenzhen,518129.China;WinTech Nano-
国际会议
上海
英文
1546-1553
2018-08-08（万方平台首次上网日期，不代表论文的发表时间）