Graphene-like Monolayer Yttrium Nitride:A Moderate Semiconductor and Pronounced Electronic Insensitivity to Strain
It is extremely important to explore two-dimensional materials with excellent properties due to their potential applications in future electronic devices.In the present study,a 2D hexagonal YN(h-YN)is predicted based on theoretical calculations.By assessing the phonon spectrum,ab initio molecule dynamics and elastic constants,the h-YN monolayer is proved to own satisfying thermal,dynamic and mechanical stability.Distinguishing from the most reported 2D transition metal mononitrides which exhibit metallic,monolayer h-YN presents a semiconducting characteristic with a indirect bandgap of 1.144 eV.In particular,h-YN presents nusually insensitive responses of electronic structures to tensile or compressive strain due to the valence orbital hybridization.Moderate bandgap together with insensitive electronic responses to strain endow h-YN a promising candidate in future nanoscale electronic devices in high-strain conditions.
two-dimensional band structure strain condition nano-electronics
Heping Cui Kai Zheng Houcai Luo Huaiyu Ye Xianping Chen
Key Laboratory of Optoelectronic Technology & Systems,Education Ministry of China,College of Optoelectronic Engineering,Chongqing University,Chongqing 400044,China
国际会议
上海
英文
1657-1660
2018-08-08（万方平台首次上网日期，不代表论文的发表时间）