An Improved Composite JTE Termination Technique for Ultrahigh Voltage 4H-SiC Power Devices
This paper presents a novel and efficient multiple-step-modulated JTE(MSM-JTE)terminal technique for ultrahigh voltage(>10 Kv)silicon carbide(SiC)devices,to extend the ultrahigh voltage JTE dose window and increase the breakdown voltage.MSM-JTE takes advantage of ring assisted JTE,etched JTE and space modulated JTE,to relief local electric field concentration and form a gradual decrease of effective charges overall which is similar to lateral variation doping(VLD)technique in silicon.A practical fabrication processes is described.Compared with conventional TZ-JTE,MS-MJTE requires only one extra etching process and is insensitive to doping dose and energy of ion implantation.The MSM-JTE is applied to 15 Kv PiN rectifier and simulated by Silvaco TCAD.The simulation result shows MSM-JTE could reach a nearly ideal maximum efficiency of 99%and keep an efficiency of 95%in a doping interval of 7×1012 cm-2.Tolerance to etching depth uncertainties is also high enough for process reliability and repeatability.
Rui Hu Xiaochuan Deng XiaoJie Xu Xuan Li Juntao Li Zhiqiang Li Yourun Zhang Bo Zhang
State key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienc Microsystem and Terahertz Research Centre,China Academy of Engineering Physics,Mianyang 621900,China State key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienc
国际会议
深圳
英文
40-44
2019-11-25（万方平台首次上网日期，不代表论文的发表时间）