Electro-thermal Analysis of 1.2kV-100A SiC JBS Diodes Under Current Overload
The reliability of power diode under large surge current stress is crucial to the applications.In this paper,the electro-thermal simulation and experimental evaluation of surge failure mechanisms of high current 1200V SiC JBS diodes were conducted.Different from thermal analysis from the perspective of thermal network,this paper combines TCAD simulation with 3D-thermal simulation for electrothermal simulation,which makes the electrical and thermal characteristics more intuitively combined.Through simulation,it is found that the contact thermal resistance between bonding wire and pad and the heating of bonding wire itself will lead to the temperature concentration near the bonding wire.The mechanism is verified by a forward nonrepetitive surge test,and the results are consistent with the simulation results.
Wei Zhong Yidan Tang Chengzhan Li Hong Chen Yourun Zhang Yun Bai Xinyu Liu
High-Frequency High-Voltage Devices and Integrated Circuits R&D Center,Institute of Microelectronics High-Frequency High-Voltage Devices and Integrated Circuits R&D Center,Institute of Microelectronics Zhuzhou CRRC Times Electric Co.Ltd.,Zhuzhou,Hunan,China High-Frequency High-Voltage Devices and Integrated Circuits R&D Center,Institute of Microelectronics University of Electronics Science and Technology of China,Chengdu,China
国际会议
深圳
英文
45-50
2019-11-25（万方平台首次上网日期，不代表论文的发表时间）