Design and Fabrication of 3300V 100mΩ 4H-SiC MOSFET with Stepped p-body Structure
in this paper,a 3300 V 100 mΩ 4H-SiC planar MOSFET with stepped p-body structure was designed and fabricated.2D TCAD tool was used to design the MOSFET cell and field limiting ring junction termination structure.The junction field-effect transistor region was optimized to get better trade-off between on-resistance and maximum gate oxide electric field in off-state.The stepped p-body was formed by two step ion implantations to transfer the avalanche point from the edge of the p-body to the deep p+area.Finally,the threshold voltage of 1.7 V,subthreshold swing of 188 Mv/decade and the interface state density of 5.35E11 cm-2eV-1 were obtained from the measured transfer curve.
4H-SiC MOSFET JFET region FLR stepped p-body
Weijiang Ni Xiaoliang Wang Miaoling Xu Mingshan Li ChunFeng Holger Schlichting Tobias Erlbacher
Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,B Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,B Power device department,Beijing Century Goldray Semiconductor Co.,Ltd,Beijing,China Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,B Fraunhofer Institute for Integrated Systems and Device Technology IISB,Erlangen,Germany
国际会议
深圳
英文
80-83
2019-11-25（万方平台首次上网日期，不代表论文的发表时间）