Facet Formation of AlGaN/AlN-based Multiple Quantum Wells by Laser Scribing

摘要：

　　We proposed a laser-assisted method to obtain smooth Fabry-Perot cavity facet of AlGaN-based UV laser structure grown on c-plane sapphire.We demonstrated that laser scribing parameters has significant influence on the morphology of the cleavage plane.Smoothness and uniformity of the facet was improved by choosing appropriate cleaving direction,distance and depth.Therefore,laser scribing is an effective and controllable process to fabricate facets of AlGaN-based laser.

作者: Bin Xue Jianchang Yan Yanan Guo Chunyan Liu Yiping Zeng Junxi Wang Jinmin Li

作者单位: Institute of Semiconductors,Chinese Academy of Sciences Institute of Semiconductors,Chinese Academy of Sciences;Youwill Hitech.Co.Ltd.No.35A Qinghua East Ro

会议类型: 国际会议

会议名称: 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors (第十六届中国国际半导体照明论坛暨2019国际第三代半导体论坛)

会议地点: 深圳

会议语种:英文

页码: 128-130

在线出版日期: 2019-11-25（万方平台首次上网日期，不代表论文的发表时间）