Effect of Mechanical Stress on the Electrical Characteristics of Different Type IGBT Chips

摘要：

　　IGBT power semiconductor devices are widely used in modern power systems,and their electrical characteristics directly affect the performance of converters.Firstly,the influence of mechanical stress on the electrical characteristics of MOSFET and IGBT chips is summarized.The way of mechanical stress generation in IGBT module is summarized from two aspects of chip technology and packaging technology,and the electrical characteristics of different types of IGBT chips are also discussed.The effects of mechanical stresses in different directions on the electrical characteristics of different types of IGBT chips are analyzed.

作者: Yihui Zhang Jinyuan Li Yinghan Liu Guanbin Wu

作者单位: Global Energy Interconnection Research Institute Co.Ltd.,Changping District,Beijing 102200,China State Grid Shandong Electric Power Company,Jinan,Shandong,China

会议类型: 国际会议

会议名称: 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors (第十六届中国国际半导体照明论坛暨2019国际第三代半导体论坛)

会议地点: 深圳

会议语种:英文

页码: 390-394

在线出版日期: 2019-11-25（万方平台首次上网日期，不代表论文的发表时间）