Controlled Growth of Si Nanowires at Low Temperature via the Solid-Liquid-Solid Mechanism
This paper provides a novel prospect of low-temperature SLS growth.Large quantities of Si nanowires were manufactured at 600℃ under a N2 atmosphere on an N-type Si(100)substrate.Two-dimensional(2D)structures of Si nanowire clusters were gained,by writing the liquid metal ink with especially-designed micropipe pen on the Si wafer,deposited with a gold layer(thickness:~10 nm).The diameter of the Si nanowire clusters with dot feature and the width of lines can be varied between 500 nm and 50 μm by changing the size of micropipe pen.
Si nanowires low-temperature SLS growth patterning mixed catalyst
Shiyu Zhang Weibin Rong Zhichao Pei Tao Zou Lining Sun
State Key Laboratory of Robotics and Systems Harbin Institute of Technology,Harbin,P.R.China
国际会议
重庆
英文
302-306
2019-05-30（万方平台首次上网日期，不代表论文的发表时间）