Strain effect on the negative capacitance of ferroelectrics
During the past decades,the scaling of nanoscale electronic devices in integrated circuits is challenged by the difficulty of overcoming the fundamental power density constraints.At present,the power density is mostly limited by the barrier stemming from the Boltzmann statistics which dictate that a minimum voltage must be applied to maintain the operating current of a transistor1.
negative capacitance ferroelectrics mechanical control
Liu Chang Wang Jie
Zhejiang University
国际会议
哈尔滨
英文
1-1
2019-09-20(万方平台首次上网日期,不代表论文的发表时间)