Study on temperature field and flow field of doped oxidized silicon wafer prepared by vertical furnace

摘要：

　　In this paper,the temperature field and flow field of the doped oxidized silicon wafer are studied by finite element simulation.The preparation parameters are optimized.The simulation results are verified by experiments.Experiment and simulation results show that the heater on the wafer surface temperature significantly affect the homogeneity.The temperature uniformity of the wafer surface at the bottom of the reaction chamber is significantly affected by the pedestal.By using the vertical diffusion furnace to prepare the doped oxidized silicon wafer,the uniformity of the film thickness is guaranteed.Finally,high quality silicon wafers are prepared in batches.

作者: Shuai Yang Jiannong Song Nan Sun

作者单位: College of Engineering,China Agricultural University,Beijing,China

会议类型: 国际会议

会议名称: 2017 International Symposium on Application of Materials Science and Energy Materials (SAMSE 2017) (2017材料科学应用与能源材料国际研讨会)

会议地点: 上海

会议语种:英文

页码: 1-7

在线出版日期: 2017-12-28（万方平台首次上网日期，不代表论文的发表时间）