THE CONTACT TYPE OF AG-GAN PIEZOELECTRIC SEMICONDUCTOR VIA EXPERIMENT
In this paper, the actual contact type of Ag-GaN piezoelectric semiconductor was determined by experiments.According to the probe contact principle, a specialized experimental device was designed to test the Ⅰ-Ⅴcharacteristic of Ag-GaN contact structure.The experimental results show that, whether the GaN piezoelectric semiconductor material is polarized or not, the contact type of Ag-GaN structure is Schottky contact.However, the current transport performance of the polarized GaN material is much higher than the unpolarized one.These findings are beneficial to the design and application of GaN-base devices.
Ag-GaN contact Piezoelectric semiconductor Probe method Ⅰ-Ⅴ characteristic Schottky contact
Xin ZHANG Guo-shuai QIN Cui-ying FAN
School of Mechanics and Engineering Science, Zhengzhou University, Zhengzhou, Henan 450001, China
国际会议
哈尔滨
英文
271-274
2019-01-11（万方平台首次上网日期，不代表论文的发表时间）