Design and characterization of high-voltage 4H-SiC GTO thyristor for pulse power applications

摘要：

　　Silicon Carbide (SiC) is attractive for semiconductor power devices because of its electrical and physical characteristics.This paper describes the design and pulse current characterization of SiC Gate Turn Off thyristors (GTO).The experimental results show that 4H-SiC GTO thyristor with MFZ-JTE achieves a high forward breakdown voltage of 7.6 kV, reaching about 93% of the theoretical value of 8.2kV · A forward drop of 3.7 V at 100 A/cm2 is measured at 25 ℃.The GTOs are tested as discharge switches in a low inductance circuit delivering 1μs pulses with a maximum switching current of 2 kA and a current rise time of 12.3 kA/μs.

关键词： Sic GTO Pulse power High voltage Edge termination Junction termination extension (JTE)

作者: Jun-tao LI Zhi-qiang LI Xing-liang XU An XIANG Yun-fei GU Long ZHANG Lin ZHANG Gang DAI

作者单位: Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, Sichuan, China;Insititute of Electronic Engineering, China Academy of Engineering Physics, Chengdu, Sichuan, China

会议类型: 国际会议

会议名称: 2018 International Conference on Defence Technology (2018国际防务技术会议)

会议地点: 北京

会议语种:英文

页码: 88-90

在线出版日期: 2018-10-21（万方平台首次上网日期，不代表论文的发表时间）