Evolution of resistive switching with switching cycles in Pt/BiFeO3/NiO/Pt memory cell
BiFeO3/NiO heterostructure is prepared using chemical solution deposition method.The X-ray result indicates that a perovskite structure has been formed in this thin film,and the images of cross-section and surface show a good thin film quality.The current-voltage curves with switching cycles have also been measured in Pt/BiFeO3/NiO/Pt structure,and two steps of resistive switching can be clearly observed.According to the analysis of resistances and switching voltages in these two steps,the evolution of resistive switching with switching cycles can be demonstrated by conducting filament mechanism.
Jinming Luo
School of Physics and Optical Information Sciences,Jiaying University,Meizhou,China
国际会议
上海
英文
1-7
2018-12-17(万方平台首次上网日期,不代表论文的发表时间)