Luminescence properties of Y5Si3O12N:Ce3+/Tb3+co-doped oxynitride phosphors
As possible alternative applying to trichromatic white LEDs,oxynitirde phosphors which are consist of a range of Y-Si-ON: single doped Ce3+and Y-Si-ON: Ce3+Tb3+co-doping were smoothly prepared with the use of typical solid state reaction route.Not only the purity of the resulting phosphors was raised,but also the intensity of emission was enhanced due to the introduction of Li2CO3 flux(5wt%).A strong wide excitation band is suitable for UV LED chips that is ranging from 200 nm to 400 nm having maximum peak around 358 nm has been noticed.In the Ce3+mono-doped phosphor,we noted a strong blue emission whose peak is at 439 nm at this excitation wavelength and in the Y5Si3O12N:Ce3+/Tb3+co-doped phosphors two different light bands were also noted: the blue band was at 439 nm when reached its peak due to the Ce3+ion and because of the and a highly efficient green emission of having maximum peak around 549 nm as a result of Tb3+ions transitions(5D4→7F5).
Sayed Ali Khan Shaoqi Wu Wei Wei Ji Luyuan Hao Simeon Agathopoulos Xin Xu Ling Zhu Xinzhong Wang
Shenzhen Key Laboratory of Flexible Memory Materials and Devices,College of Electronic Science and T Chinese Academy of Sciences Key Laboratory of Materials for Energy Conversion,Department of Material Department of Materials Science and Engineering,University of Ioannina,GR-451 10 Ioannina,Greece. School of Electronic Communication and Technology,Shenzhen Institute of Information Technology,Shenz
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2018-12-17（万方平台首次上网日期，不代表论文的发表时间）