XPS studies of charging effect induced by X-ray irradiation on amorphous SiO2 thin films
X-ray photoelectron spectroscopy has been used to investigate positive charge accumulation on amorphous SiO2 films induced by in situ X-ray irradiation.We found out two different kinds of samples.The charge accumulation at the surface affects the properties of films.Then,by examining the significant changes of chemical shift and FWHM value,the films show a character of saturation during the process and the results can trace to oxygen vacancies.From the results of loss measured before and after the irradiation,we can say that the performance of highly reflective coatings,especially the surface SiO2 thin films,will directly affect the gyro abilities.
DaiPeng Xing HuiZhong Zeng WenXu Zhang WanLi Zhang
State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,China
国际会议
上海
英文
1-6
2018-12-17(万方平台首次上网日期,不代表论文的发表时间)