Resistance requirements of threshold switching selectors in 1S1R crossbar array

摘要：

　　Leakage current suppression ability of threshold switching selectors is important for the high-density crossbar array of resistive random access memory(RRAM).Nevertheless,incompatibility of selector with paired RRAM element will lead to serious problems during operation.This paper investigates the ON-/OFF-resistance requirements of threshold switching selectors with simulation in 1Mb array.Results show that OFF-resistance needs to be higher than certain value while ON-resistance needs to be lower than some value to make sure successful operation.In addition,it presents the method determining the appropriate resistance range in detail.It aims at proposing guideline for fabricating and choosing adequate threshold switching selectors before integrating with RRAM element economically.

作者: Chenglong Lin Gaosheng Li Xueqing Jia

作者单位: College of Electronic Science,National University of Defense Technology(NUDT),Changsha 410073,China

会议类型: 国际会议

会议名称: 2017 International Conference on Electronic Information Technology and Computer Engineering (EITCE 2017)(2017电子信息技术与计算机工程国际会议)(EITCE2017)

会议地点: 珠海

会议语种:英文

页码: 1-4

在线出版日期: 2017-09-23（万方平台首次上网日期，不代表论文的发表时间）