Proximity Effect Aware Detailed Placement in Electron Beam Lithography

摘要：

　　Proximity effect is one of the most tremendous consequences that produces unacceptable exposures during electron beam lithography(EBL),and thus distorting the layout pattern.In this paper,we propose the first work which considers the proximity effect during layout stage.We first give an accurate evaluation scheme to estimate the proximity effect by fast Gauss transform.Then,we devote a proximity effect aware detailed placement objective function to simultaneously consider wirelength,density and proximity effect.Furthermore,cell swapping and cell matching based methods are used to optimize the objective function such that there is no overlap among cells.Compared with a state-of-the-art work,experimental result shows that our algorithm can efficiently reduce the proximity variations and maintain high wirelength quality at a reasonable runtime.

作者: Yuhang Chen Zhipeng Huang Xiongfeng Chen Jianli Chen Wenxing Zhu

作者单位: College of Mathematics and Computer Science,Fuzhou University,Fuzhou 350108,China Center for Discrete Mathematics and Theoretical Computer Science,Fuzhou University,Fuzhou 350108,Chi Fujian Key Laboratory of Information Processing and Intelligent Control,Minjiang University,Fuzhou 3

会议类型: 国际会议

会议名称: 2018 2nd International Conference on Electronic Information Technology and Computer Engineering (EITCE 2018)(2018第二届电子信息技术与计算机工程国际会议)(EITCE2018)

会议地点: 上海

会议语种:英文

页码: 1-5

在线出版日期: 2018-10-12（万方平台首次上网日期，不代表论文的发表时间）