Simulation Study of Overcurrent Turn-off Capability in 4500V IGBT

摘要：

　　According to the requirement of IGBTs over-current turn-off capability,this paper analyzes the factors affecting the dynamic latch-up of IGBT chip during the over-current turn-off process,including the gate width of IGBT cell,the doping concentration of back P+collector and the dVce/dt when the IGBT is turned off.The simulation results show that the anti-dynamic latch-up capability of IGBT can be effectively improved by decreasing the gate width and back P+collector doping concentration.Through multi-cell parallel simulation,it is found that current concentration exists in the process of overcurrent trun-off,which leads to the further increase of the lattice temperature,and the overcurrent turn-off capability declines.

作者: Yaohua Wang Rui Jin Ge Zhao Mingchao Gao Li Li Lei Cui Guoqing Leng

作者单位: Global Energy Interconnection Research Institute co.,Ltd.,Beijing,100192,CHN;State Key Laboratory of Global Energy Interconnection Research Institute co.,Ltd.,Beijing,100192,CHN

会议类型: 国际会议

会议名称: 2018 2nd International Conference on Electronic Information Technology and Computer Engineering (EITCE 2018)(2018第二届电子信息技术与计算机工程国际会议)(EITCE2018)

会议地点: 上海

会议语种:英文

页码: 1-4

在线出版日期: 2018-10-12（万方平台首次上网日期，不代表论文的发表时间）