Enhanced photoluminescence properties of Al doped ZnO films
Al doped ZnO films are fabricated by radio frequency magnetron sputtering.In general,visible emission is related to various defects in ZnO films.However,too much defects will cause light emission quench.So it is still a controversial issue to control appropriate defect concentrations.In this paper,based on our previous results,appropriate Al doping concentration is chosen to introduce more both interstitial Zn and O vacancy defects,which is responsible for main visible emission of ZnO films.A strong emission band located at 405 nm and a long tail peak is observed in the samples.As Al is doped in ZnO films,the intensity of emission peaks increases.Zn interstitial might increase with the increasing Al3+substitute because ZnO was a self-assembled oxide compound.So Zn interstitial defect concentration in Al doped ZnO films will increase greatly,which results in the intensity of emission peaks increases.
H X Chen J J Ding
College of Science,Xian Shiyou University,Xian,Shaanxi 710065,China
国际会议
三亚
英文
1-5
2017-11-18（万方平台首次上网日期，不代表论文的发表时间）