Ultra-high Density Rewritability Function Achieved Using Phase-change Electrical Probe Memory

摘要：

　　The erasable performance of a scanning probe phase-change memory from the amorphous to the crystalline phase or vice verse is investigated here in light of a previously developed 2D comprehensive model.The simulation results demonstrate the feasibility of erasing amorphous bits from a crystalline background using the scanning probe phase-change memory under low power consumption.Erasing crystalline bits from an amorphous background is found to be problematic due to the presence of the unwanted transformation of the crystalline ring.Such a drawback can be however effectively overcome using either patterned media or slow crystal growth material,according to a newly developed nucleation-growth model.

关键词： Erase Phase-Change Media Scanning Probe Nucleation Growth

作者: Jing Pan

作者单位: School of Information Engineering,Nanchang HangKong University Nanchang China

会议类型: 国际会议

会议名称: 2017 IEEE 2nd Advanced Information Technology,Electronic and Automation Control Conference(IAEAC 2017)(2017 IEEE 第2届先进信息技术、电子与自动化控制国际会议)

会议地点: 重庆

会议语种:英文

页码: 240-246

在线出版日期: 2017-03-25（万方平台首次上网日期，不代表论文的发表时间）