Thermal Design of Microwave Power Amplifiers Based on GaAs HBTs

摘要：

　　In this paper,a novel type of thermal shunt structure in layout design is proposed to optimize the thermal distribution of microwave power amplifiers based on GaAs HBT process.The collector metal is introduced to provide a new heat dissipation path from the power cells of the chip to the ground.The simulation results show that,by increasing this cooling path,the maximum temperature of the power cells is effectively reduced from 163°C to 148°C when the circuit is working normally.In order to ensure the RF performance of the amplifiers,Metal 2 involved in the new heat dissipation path is in the shape of fingers,which can minimize the coupling parasitic capacitance.

关键词： GaAs HBT microwave power amplifiers thermal shunt thermal design

作者: Ting Tian Huai Gao G.P.Li Shengli Lu

作者单位: Southeast University,National ASIC System Engineering Center,Nanjing Suzhou Innotion Tech.Co.,Ltd.,Suzhou Department of Electrical Engineering and Computer Science,University of California,Irvine,CA,USA

会议类型: 国际会议

会议名称: 2017 IEEE 2nd Advanced Information Technology,Electronic and Automation Control Conference(IAEAC 2017)(2017 IEEE 第2届先进信息技术、电子与自动化控制国际会议)

会议地点: 重庆

会议语种:英文

页码: 596-599

在线出版日期: 2017-03-25（万方平台首次上网日期，不代表论文的发表时间）