Study on Electrical Properties of Rare Earth La Doped AgSnO2 Contact Materials
La doped SnO2 solid solution is an important part of the electrical contact materials, but also the key part of the contact material, which can improve the material performance.The electronic structures of La doped SnO2 with different proportions (50%, 12.5%, 16.67%, 8.34%, 25%) were calculated by the first principle calculation method based on density functional theory.The lattice parameters, band structure and density of states were analyzed.The results show that the La doped SnO2 is still a direct band gap semiconductor material, and it makes the unit cell volume increase.We find that the 5d orbit of La inserts into the conduction band, which leads to the shift of the conduction band bottom to lower energy zone and narrowing of band gap.The doping ratio is 16.67% when the conductivity is the best.Finally, the contact resistance and arc energy of different proportion of La doped contact materials were measured by experiment, and the correctness of the calculation results were verified.Therefore, this paper provides a theoretical basis for the development and application of contact materials.
La-doped SnO2 contact material first-principle electrical properties
Caitian Zhao Jingqin Wang Yanan Cai
Province-Ministry Joint Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability Hebei University of Technology, Tianjin, 300130,China
国际会议
江苏常熟
英文
125-129
2017-04-18（万方平台首次上网日期，不代表论文的发表时间）