Theoretical Study On La、 Ce、 Nd Doped AgSnO2 Contact Materials

摘要：

　　In widely used AgSnO2 contact materials, SnO2 is a semiconductor with a wide band gap, and its electrical conductivity is so bad that it makes the resistance of the AgSnO2 increase.We investigated the electric structure of SnO2 doped with La Ce and Nd respectively.Analyzing and comparing the band structure and density of states of the pure SnO2 and doped SnO2 by first-principles method, we discover that conduction band of the doped SnO2 removes to the lower energy level, so band gap narrows.The TDOS of doped SnO2 all across the Fermi level.Specially, band gap of La doped SnO2 is the smallest and density of states at the Fermi level of La doped SnO2 is the maximum.Generally, La Ce and Nd doping can all increase the conductivity of SnO2, and La doping makes the best effect.

关键词： SnO2 doped with La、Ce、Nd contact materials by first-principles electrical conductivity

作者: Yanan Cai Jingqin Wang Caitian Zhao Lulu Zhou

作者单位: Electrical Apparatus Institute in Hebei University of Technology, Tianjin, 300130, China

会议类型: 国际会议

会议名称: The 6th Intrenational Conference on Reliability of Electrical Products and Electrical Contacts(第六届电工产品可靠性与电接触国际会议)

会议地点: 江苏常熟

会议语种:英文

页码: 257-260

在线出版日期: 2017-04-18（万方平台首次上网日期，不代表论文的发表时间）