The Analysis of Reliability and Optimization of GaN FETs in Magnetic Resonant Coupling Wireless Power Transmission System
The popularity of magnetic resonant coupling wireless energy transfer in high frequency has increased over the last few years and in particular for applications targeting portable devices charging such as phonesandcomputers.Under very high resonant frequency, if the transmitter inverter circuit of WPT system uses traditional power MOS FETs as switches , this setting may cause more problems like more switching losses, higher heating losses and cant achieve soft-switching.And these are partly to blame for low efficiency and poor reliability of the WPT system.In order to solve these above problems, Efficient Power Conversion(EPC) company introduces Voltage Mode class-E amplifier and Voltage Mode class-D amplifier with eGaN (R)FET.This paper analyzing the performance of the soft-switching in class-E amplifier and class-D amplifier under 1Mhz frequency.Through LTspice simulation, it has proved that small Rds(on) and fast switching speed GaN FETs were used in class-E amplifier and class-D amplifier in inverter circuit can achieve better soft-switching under 1Mhz frequency.Because its lower device loss and heat, the efficiency and reliability of the WPT system were increased.
Wireless power transfer ZVS Class-D amplifier Class-E amplifier GaN FET Reliability
Haoran Yu Yulong Cui Chunlei Xiang
Beijing University of Chemical Technology, Beijing, 100029
国际会议
江苏常熟
英文
316-321
2017-04-18（万方平台首次上网日期，不代表论文的发表时间）